Publications

Average Drift Mobility and Apparent Sheet-Electron Density Profiles in Strained-Si–SiGe Buried-Channel Depletion-Mode n-MOSFETs, Kostis Michelakis, Antonio Vilches, Solon Despotopoulos, Kristel Fobelets, Christos Papavassiliou, Chris Toumazou , IEEE Transcations on Electron Devices 51 (8) 1309-1314, August 2004 (PDF)

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies,  K. Fobelets, W. Jeamsaksiri, C. Papavasiliou, T. Vilches, V. Gaspari, J. E. Velazquez-Perez, K. Michelakis, T. Hackbarth and U. König, Solid-State Electronics, Vol. 48, 2004, pp 1401-1406 (2004) (PDF)

Buried-channel SiGe HMODFET device potential for micropower applications,
A. Vilches, Kostis Michelakis, Kristel Fobelets, David Haigh, C. Papavassiliou, T. Hackbath and U. Konig, Solid-State Electronics, Vol. 48, , pp. 1423-1431 (2004) (PDF)

SiGe HMODFET `KAIST' Micropower Model and Amplifier Realisation, A.Vilches, Kostis Michelakis, Kristel Fobelets, Christos Papavassiliou, T. Hackbath & U. Konig, IEEE Transactions on Circuits and Systems I, Vol 51, pp1100-1105 (2004) (PDF)

SiGe virtual substrate HMOS transistor for analogue application. K. Michelakis, S. Despotopoulos, V. Gaspari, A. Vilches, K. Fobelets, C. Papavassiliou, C. Toumazou, J. Zhang. Applied Surface Science vol 224, pp386-389 (2004) (PDF)

Effect of temperature on the transfer characteristic of a 0.5 µm gate Si : SiGe depletion mode n-FET. V. Gaspari, K. Fobelets, J.E. Velazquez-Perez, R. Ferguson, K. Michelakis, S. Despotopoulos, C. Papavassiliou. Applied Surface Science vol 224, pp390-393 (2004) (PDF)

Monolithic micropower amplifier using SiGe n-MODFET device Vilches, A.; Fobelets, K.; Michelakis, K.; Despotopoulos, S.; Papavassiliou, C.; Hackbarth, T.; Konig, U. Electronics Letters, v 39, n 12, Jun 12, 2003, p 884-886 (2003) (PDF)

SiGe Hetero-FETs potential for Micropower Applications, C.Papavassiliou, C.Toumazou and K. Fobelets, Invited paper in the Topical Workshop in Heterostructure Microelectronics, Kyoto Japan August 2000, IEICE transactions on Electronics, E84-C, 10, 1415 (2001) (PDF)

Multibit Quadrature Sigma-Delta Modulator With Dem Scheme, Roberto Maurino*, Christos Papavassiliou , IEEE ISCAS 2004, Vancouver, May 23-26, 2004. Published in the proceedings, vol. I p1136. (PDF)

Systematic Synthesis Method For Analogue Circuits – Part II Active-Rc Circuit Synthesis, D. Haigh, FQ Tan, C. Papavassiliou, IEEE ISCAS 2004, Vancouver, May 23-26, 2004, Published in the proceedings, vol. I p705. (PDF)

Systematic Synthesis Method For Analogue Circuits – Part III All-Transistor Circuit Synthesis D. Haigh, FQ Tan, C. Papavassiliou, IEEE ISCAS 2004, Vancouver, May 23-26, 2004. Published in the proceedings, vol. I p709. (PDF)

Thermal study of 0.5 ?m-gate Si/SIGe depletion-mode n-MOSFETs, Gaspari V. , Fobelets K., Velazquez-Perez J.E., Ferguson R., Michelakis K. , Despotopoulos S. , Papavassilliou C., Invited talk, CDE-2003, Calella (Barcelona), Spain (2003)

Influence of substrate thinning on the threshold voltage of Si:SiGe Heterojunction MOSFETs, S.M. Li, K. Fobelets, J.E. Velazquez-Perez, V. Gaspari, R.Ferguson, K. Michelakis, S. Despotopoulos, and C. Papavassilliou, Abstracts of the1st International SiGe Technology and Device Meeting (ISTDM2003), Nagoya, Japan, January 15-17, 2003.

SiGe virtual substrate HMOS transistor for analogue applications, K. Michelakis, S. Despotopoulos, V. Gaspari, A. Vilches, K. Fobelets, C. Papavassiliou, C. Toumazou, J. Zhang, Abstracts of the 1st International SiGe Technology and Device Meeting (ISTDM2003), Nagoya, Japan, pp87-88. January 15-17, 2003.

Effect of temperature on the transfer characteristic of a 0.5 µm gate Si : SiGe depletion mode n-FET , Gaspari V., Fobelets K., Velazquez-Perez J.E., Ferguson R., Michelakis K., Despotopoulos S., Papavassiliou C. , Abstracts of the1st International SiGe Technology and Device Meeting (ISTDM2003), Jan 15-17, Japan, pp.89-90 (2003)

Experimental study of depletion mode SiGe MOSFETS for low temperature operation , Fobelets K., Ferguson R.S., Gaspari V., Verlazquez-Perez J.E., Michelakis K., Despotopoulos S., Zhang J. Papavassiliou C. Proceedings of IEEE ESSDERC 2002, Florence, Italy, pp. 555-558 (2002) (PDF)

An optoelectronic crosspoint switch: the devices and a polymer-based integration platform. McCarthy, A.; Suyal, H.; Casswell, J.J.; Walker, A.C.; Arora, R.; Semati, M.R.; Papavassiliou, C.; Tooley, F.A.P.; Suyal, N.; Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE , Volume: 1 , 2002 Page(s): 55 -56 (PDF)

A Monolithic 4x4 TIA, Crosspoint Switch and Laser Driver IC with Very High Programming Speed, M. Semati, R. Arora and C. Papavassiliou, Proceedings of the IEEE European Solid State Circuits Conference, Florence, Italy September 24-26, pp. 499-502, (2002) (PDF).

Sige HMOSFET Differential Pair, K. Michelakis, S. Despotopoulos, S. G. Badcock, C. Papavassiliou, A. G. O’Neill, C. Toumazou, IEEE International Symposium on Circuits and Systems, Sydney, May 2001. Published in the proceedings, vol. 1, pp. 679 -682 (PDF)

Quadrature SD Modulators with a Dynamic Element Matching Scheme, R. Maurino and C.Papavassiliou. IEEE Transactions on Circuits and Systems II (in Press)

SiGe HMOSFET monolithic inverting current mirror, K. Michelakis, S. Despotopoulos, C. Papavassiliou, A. Vilches, K. Fobelets, C. Toumazou, Solid-State Electronics (in Press)